Nd:Ce: Awọn itọkasi imọ-ẹrọ ti YAG laser crystal sticks |
Doping fojusi | Nd:0.1~1.4ati%,Ce:0.05~0.1ati% |
Crystal iṣalaye | <111>+50 |
Gbigbe wavefront iparun | s0.1A / inch |
Ipin iparun | ≥25dB |
Iwọn ọja | Iwọn opin≤50mm, Gigun≤150 mmSlats ati awọn disiki le jẹ adani gẹgẹbi awọn ibeere alabara. |
Ifarada iwọn | Iwọn ila opin:+0.00/-0.05mm,Ipari:±0.5mm |
Silindrical dada processing | Fine lilọ, polishing, threading |
Ipari oju parallelism | ≤ 10” |
Awọn perpendicularity ti awọn opin oju si ọpá ipo | ≤ 5' |
Ipari oju flatness | 入/10 @632.8nm |
Didara oju | 10-5 (MIL-0-13830A) |
Chamfer | 0.15 + 0.05mm |
Aso | S1/S2:R@1064nms0.2% |
S1:R@1064nm≤0.2%,S2:R@1064=20+3% |
S1:R@1064nm≤0.2%,S2:R@1064nmz99.8% |
Miiran fiimu awọn ọna šiše le wa ni adani. |
Ibajẹ lesa ala ti fiimu Layer | ≥500MW/cm2 |
Lesa wefulenti | 1064nm |
Diode fa fifalẹ igbi igbi | 808nm |
Atọka itọka | 1.8197 @ 1064nm |
pataki | Dada metallization |
Igun igun oju oju ipari, concave/convex dada, ati bẹbẹ lọ. |